A method for forming an MTJ structure suitable for use in a MRAM device having
a bottom electrode including a layer of platinum, ruthenium, iridium, rhodium,
osmium, palladium or their oxides and having reduced surface roughness to improve
the hysteresis loop characteristics of the resulting MTJ structure. The bottom
electrode layer may also combine the functions of both the seeding layer and bottom
electrode of the conventional two-layer structure, thereby simplifying the manufacturing process.