A non-volatile memory device may include a string of serially connected memory
cell transistors with each memory cell transistor of the string being connected
to a different word line. The non-volatile memory device may be programmed by applying
a pass voltage to a first word line connected to a first memory cell transistor
of the string, by applying a coupling voltage to a second word line connected to
a second memory cell transistor of the string, and by applying a program voltage
to a third word line connected to a third memory cell transistor of the string.
More particularly, the coupling voltage can be greater than a ground voltage of
the memory device, and the pass voltage and the coupling voltage can be different.
In addition, the program voltage can be applied to the third word line while applying
the pass voltage to the first word line and while applying the coupling voltage
to the second word line, and the third memory cell transistor can be programmed
responsive to applying the program voltage to the third word line wherein the second
memory cell transistor is between the first and third memory cell transistors of
the serially connected string. Related devices are also discussed.