A memory device using vertical nanotubes includes an array of first electrodes
arranged in strips in a first direction, a dielectric layer deposited on the array
of first electrodes, the dielectric layer having a plurality of holes arranged
therein, an array of nanotubes for emitting electrons, the array of nanotubes contacting
the array of first electrodes and vertically growing through the plurality of holes
in the dielectric layer, an array of second electrodes arranged in strips in a
second direction on the dielectric layer, the array of second electrodes contacting
the array of nanotubes, wherein the second direction is perpendicular to the first
direction, a memory cell positioned on the array of second electrodes for trapping
electrons emitted from the array of nanotubes, and a gate electrode deposited on
an upper surface of the memory cell for forming an electric field around the array
of nanotubes.