An edge-emitting type 650 nm band red semiconductor laser device is provided,
which includes a resonator structure having an active layer on a semiconductor
substrate. A low reflection three-layer film is provided on an emitting edge face
of the resonator structure and a high reflection multi-layer film is provided on
a rear edge face of the resonator structure. The low reflection three-layer film
is formed by sequentially stacking a first Al203 film having a thickness of 10
nm, a SiN4 film having a thickness of 190 nm, and a second Al203 film having a
thickness of 10 nm on the emitting edge face by a sputtering process.