A negative resist composition includes a polymer having any one of
dicarboxylate monoester compounds represented by the following general
formulae (1) and (2) as a monomer component: wherein, R.sub.1 and
R.sub.2 represent alkyl chains having 0 to 8 carbon atoms, R.sub.3
represents a substituent having at least two or more alicyclic
structures, and R.sub.4 and R.sub.5 represent hydrogen atoms or alkyl
groups having 1 to 8 carbon atoms. A method for forming a resist pattern
uses the above negative resist composition. By containing the polymer, a
resistance to dry etching and a resistance to electron beam from a
scanning electron microscope (SEM) are enhanced as well as a solubility
in an alkali developing solution is maintained.