A device manufacturing method capable of imaging structures on both sides
of a substrate, is presented herein. One embodiment of the present
invention comprises a device manufacturing method that etches reversed
alignment markers on a first side of a substrate to a depth of 10 .mu.m,
the substrate is flipped over, and bonded to a carrier wafer and then
lapped or ground to a thickness of 10 .mu.m to reveal the reversed
alignment markers as normal alignment markers. The reversed alignment
markers may comprise normal alignment patterns overlaid with mirror
imaged alignment patterns.