A process for fabricating non-volatile memory by tilt-angle ion
implantation comprises essentially the steps of implanting sideling
within a nitride dielectric layer heterogeneous elements such as, for
example, Ge, Si, N2, O2, and the like, for forming traps capable of
capturing more electrons within the nitride dielectric layer such that
electrons can be prevented from binding together as the operation time
increased; etching off both ends of the original upper and underlying
oxide layers to reduce the structural destruction caused by the
implantation of heterogeneous elements; and finally, depositing an oxide
gate interstitial wall to eradicate electron loss and hence promote the
reliability of the device.