A method for fabricating GaN-based LED is provided. The method first forms
a first contact spreading metallic layer on top of the texturing surface
of the p-type ohmic contact layer. The method then forms a second and a
third contact spreading metallic layers on top of the first contact
spreading layer. The p-type transparent metallic conductive layer
composed of the three contact spreading metallic layers, after undergoing
an alloying process within an oxygenic or nitrogenous environment under a
high temperature, would have a superior conductivity. The p-type
transparent metallic conductive layer could enhance the lateral contact
uniformity between the p-type metallic electrode and the p-type ohmic
contact layer, so as to avoid the localized light emission resulted from
the uneven distribution of the second contact spreading metallic layer
within the third contact spreading metallic layer. The GaN-based LED's
working voltage and external quantum efficiency are also significantly
improved.