A method of fabricating a lapping carrier is provided that includes the
steps of defining at least one opening extending through a workpiece that
is sized to receive a wafer, and cryogenically tempering the workpiece to
produce a lapping carrier. By cryogenically tempering the workpiece, the
conversion of the crystalline structure of the workpiece to a martensite
crystalline structure is enhanced, thereby improving the hardness of the
lapping carrier. A lapping carrier is also provided that has a
crystalline structure, of which at least 70% is a martensite crystalline
structure. An apparatus for lapping a wafer is further provided that
includes a hardened lapping carrier and at least one lapping plate
proximate the lapping carrier for lapping wafer(s) disposed within the at
least one opening defined by the lapping carrier.