Charge-splitting networks, optoelectronic devices, methods for making
optoelectronic devices, power generation systems utilizing such devices
and method for making charge-splitting networks are disclosed. An
optoelectronic device may include a porous nano-architected (e.g.,
surfactant-templated) film having interconnected pores that are
accessible from both the underlying and overlying layers. A pore-filling
material substantially fills the pores. The interconnected pores have
diameters of about 1-100 nm and are distributed in a substantially
uniform fashion with neighboring pores separated by a distance of about
1-100 nm. The nano-architected porous film and the pore-filling, material
have complementary charge-transfer properties with respect to each other,
i.e., one is an electron-acceptor and the other is a hole-acceptor. The
nano-architected porous, film may be formed on a substrate by a
surfactant temptation technique such as evaporation-induced
self-assembly. A solar power generation system may include an array of
such optoelectronic devices in the form of photovoltaic cells with one or
more cells in the array having one or more porous charge-splitting
networks disposed between an electron-accepting electrode and a
hole-accepting electrode.