A memory device includes a first layer of MRAM memory cells arranged in
accordance with an MRAM architecture, a second layer of MRAM memory cells
that is fabricated over the first layer of MRAM memory cells, and a
common connection associated with the first layer of MRAM memory cells
and the second layer of MRAM memory cells that facilitates operation of
the memory device. The method of fabricating the memory device includes
fabricating a first layer of MRAM memory cells arranged in accordance
with an MRAM architecture, fabricating a second layer of MRAM memory
cells over the first layer of MRAM memory cells, and fabricating a common
connection associated with the first layer of MRAM memory cells and the
second layer of MRAM memory cells that facilitates operation of the
memory device.