Methods are provided for fabricating a semiconductor device having an
impurity doped region in a silicon substrate. The method comprises
forming a metal silicide layer electrically contacting the impurity doped
region and depositing a conductive layer overlying and electrically
contacting the metal silicide layer. A dielectric layer is deposited
overlying the conductive layer and an opening is etched through the
dielectric layer to expose a portion of the conductive layer. A
conductive material is selectively deposited to fill the opening and to
electrically contact the impurity doped region.