A hosting structure of nanometric components is described comprising a
substrate, a first multi-spacer level comprising a first plurality of
spacers including first conductive spacers parallel to each other, and at
least a second multi-spacer level realized above said first multi-spacer
level and comprising a second plurality of spacers arranged transversally
to said first plurality of spacers and including at least a lower
discontinuous insulating layer and an upper layer, including in turn
second conductive spacers. In particular, each pair of spacers of the
second multi-spacer level defines with a spacer of the first multi-spacer
level a plurality of nanometric hosting seats having at least a first and
a second conduction terminal realized by portions of the first conductive
spacers and of the second conductive spacers faced in the hosting seats.
A method for manufacturing such a structure is also described.