A semiconductor device includes: a semiconductor substrate having first
and second semiconductor layers; an IGBT having a collector region, a
base region in the first semiconductor layer, an emitter region in the
base region, and a channel region in the base region between the emitter
region and the first semiconductor layer; a diode having an anode region
in the first semiconductor layer and a cathode electrode on the first
semiconductor layer; and a resistive region. The collector region and the
second semiconductor layer are disposed on the first semiconductor layer.
The resistive region for increasing a resistance of the second
semiconductor layer is disposed in a current path between the channel
region and the cathode electrode through the first semiconductor layer
and the second semiconductor layer with bypassing the collector region.