Capacitors are disclosed having reduced parasitic capacitance. In one
embodiment, the capacitor includes a first set of electrodes, each
electrode of the first set extending through at least one of a plurality
of back-end-of-line (BEOL) layers above a substrate; a second set of
electrodes, each electrode of the second set extending through at least
one of the BEOL layers, and wherein each electrode of the second set
extends to a greater depth of the plurality of BEOL layers than each
electrode of the first set.