The object of the present invention is to provide an electrostatic chuck
which has high plasma resistance and high capability of cooling a
material to be clamped. As for the basic structure of the electrostatic
chuck, an insulating film is formed on a surface of a metal plate by
flame spraying, and a dielectric substrate is bonded onto the insulating
film by an insulating adhesive layer. The top surface of the dielectric
substrate is a surface for mounting a material to be clamped W such as a
semiconductor wafer. Electrodes are formed on the lower surface of the
dielectric substrate.