Disclosed is a method of chemical vapor deposition (CVD). The method
provides for use of a showerhead through which a source material gas
including a reactive gas of at least one kind and a purge gas is injected
over a substrate located in a reaction chamber to deposit a film on the
substrate. The showerhead has reactive gas outlets surrounded by purge
gas outlets. The bottom surface of the showerhead is spaced apart from
the substrate by a predetermined distance. Reactive gases of different
kinds are injected into compartments formed inside the showerhead so that
each compartment of the showerhead is filled with the reactive gas of
only one kind, and a purge gas of the source material gas is supplied
into another compartment formed inside the showerhead. The reactive gas
and the purge gas are discharged through the reactive gas outlets and
purge gas outlets. Preferably, there are more purge gas outlets than
reactive gas outlets.