Multi-bit nonvolatile memory devices and related methods of manufacturing
the same are described. In some multi-bit nonvolatile memory devices, a
semiconductor substrate has a recessed region defined therein. An
insulating layer, which can include an ONO layer, is configured to store
data within programming regions therein, and covers a sidewall and a
lower surface of the recess region. A gate electrode is on the insulating
layer in the recessed region. At least one pair of impurity regions are
in the semiconductor substrate. The impurity regions adjoin a side
surface of the insulating layer in the recess region and form a relative
angle that is less than 120.degree. therebetween with respect to a center
of the gate electrode.