The present invention is for providing a sophisticated active matrix type
organic semiconductor device. A first electrode 102 is formed on an
insulated surface. A second insulated film 104 is formed on the first
electrode 102 via a first insulated film 103. An organic semiconductor
film is formed on an opening part formed on the second insulated film 104
and the second insulated film 104. An organic semiconductor film 105 is
obtained by polishing the same until the second insulated film 104 is
exposed. Furthermore, by forming a second electrode 106 and a third
electrode 107 on the organic semiconductor film 105, an organic
semiconductor device of the present invention can be obtained.