A non-volatile memory element includes a bottom electrode 12, a bit line
14 provided on the bottom electrode 12, and a recording layer 15
containing phase change material connected between the bottom electrode
12 and the bit line 14. In accordance with this invention, the bit line
14 is in contact with a growth initiation surface 15a of the recording
layer 15. This structure can be obtained by forming the bit line 14
before the recording layer 15, resulting in a three-dimensional
structure. This decreases the area of contact between the recording layer
15 and the bit line 14, decreasing heat dissipation to the bit line 14
without increasing the thickness of the recording layer 15. With this
three-dimensional structure, moreover, there is no top electrode between
the bit line 14 and the recording layer 15, keeping down the complexity
of the fabrication process.