Disclosed is a method for manufacturing an optoelectronic semiconductor
device having a p-n junction diode, which includes the steps of: (a)
etching at least one surface of the p-n junction diode in a depth
direction to form a plurality of continuous, isolated or mixed type
electrode pattern grooves with a certain array; and (b) filling the
formed grooves with a conductive ink containing a transparent conducting
particle through an inkjet and then performing heat treatment to form a
buried transparent electrode, the optoelectronic semiconductor device,
and an apparatus for manufacturing the optoelectronic semiconductor
device. In the present invention, covering loss is significantly reduced
due to a buried transparent electrode so that the high efficiency of
photoelectric conversion can be implemented, and there can be provided
the easiness of a manufacturing process and the enhancement of
productivity through the unification of etching and electrode forming
processes.