The present invention provides a resist composition which enables
uniformly thickening a resist pattern with a resist pattern thickening
material, regardless of the direction, spacing variations of the resist
pattern, and the components of the resist pattern thickening material and
enables forming a fine space pattern of resist, exceeding exposure limits
of light sources of exposure devices at low cost, easily, and
efficiently. The resist composition contains an alicyclic compound
(melting point: 90.degree. C. to 150.degree. C.), and a resin. The method
for manufacturing a semiconductor device includes forming a resist
pattern on a surface of a workpiece to be processed by using a resist
composition and applying a resist pattern thickening material on the
surface of the workpiece so as to cover the surface of the resist pattern
to thicken the resist pattern; and patterning the surface of the
workpiece by etching thereof using the thickened resist pattern as a
mask.