A silicon wafer cleaning method, comprising a first cleaning process, in
which, after completion of mirror polishing of the surface, the silicon
wafer is immersed in a non-ionic surfactant aqueous solution; a second
cleaning process, in which the wafer, after completion of the first
cleaning process, is immersed in a dissolved-ozone aqueous solution; and,
a third cleaning process, in which the wafer, after completion of the
second cleaning process, is immersed in an aqueous solution containing
ammonia and hydrogen peroxide; and in which the processes are performed
in succession.