To provide a nonvolatile memory including a word-line drive circuit that
supplies a selective voltage to a selective transistor connected in
series to a nonvolatile memory device. The word-line drive circuit
applies a first selective voltage VDD to a control electrode of the
selective transistor in a first period, and applies a second selective
voltage VPP higher than the first selective voltage VDD to the control
electrode of the selective transistor in a second period that follows the
first period. Thereby, a current drive capability of the selective
transistor is gradually changed. Thus, it becomes possible to limit the
current drive capability of the selective transistor at timing at which
snap-back is caused. As a result, an excessive current caused by the
snap-back is suppressed, thereby reducing damage inflicted on the
nonvolatile memory device.