The Frohmann-Bentchkowsky EPROM cell is programmed by utilizing biasing voltages which are sufficient to induce hot punchthrough holes to flow from the source region to the drain region, and insufficient to induce avalanche breakdown at the drain-to-semiconductor material junction. In addition, the Frohmann-Bentchkowsky EPROM cell is programmable with CMOS compatible voltages by forming the physical floating gate length of the cell to be less than the minimum physical gate length of the CMOS devices.