A semiconductor memory device, a method for manufacturing the same, a memory circuit including the semiconductor memory device, and a method for driving the same, are provided. In detail, one transistor forms a memory cell, and a single transistor cell capable of arbitrarily accessing the memory cell, a method for manufacturing the same, a memory circuit, and a method for driving the memory circuit, are provided. An island type semiconductor layer as an active region is formed on a ferroelectric layer. A word line crosses the semiconductor layer. A source is formed on the semiconductor layer on one side of the word line, and a drain is formed on the other side. A plate line is formed below the ferroelectric layer to face the word line, and intersects the word line. A drive line is connected to the source, and a bit line is connected to the drain.