An organometallic complex of formula(I) having a low evaporation temperature can be used as a precursor for the MOCVD of a metal compound thin film on semiconductor devices ##STR1## wherein, M is Ti or Zr; R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are each independently H or C.sub.1-4 alkyl; and m is an integer ranging from 2 to 5.