There is disclosed a method for forming a copper wiring in a semiconductor device. The method establishes a metal organic chemical vapor deposition process technology in which 1,1,1,5,5,5-hexafluoro-2,4-pentadionato (3,3-dimethyl-1-butene)-copper(I) ((hfac)Cu(DMB)) compound is used as a copper precursor by optimally setting deposition process conditions of a copper deposition equipment having a bubbler, a direct liquid injection (DLI) system, a control evaporation mixer (CEM) and a vaporizer of an orifice type or a spray type. Accordingly it can not only realize reappearance of the copper deposition process but also obtain a copper thin film having a good film quality.