A substrate containing a compound semiconductor layer comprises a substrate
layer 11, a first semiconductor layer 12 formed on the substrate layer 11,
and a second semiconductor layer 13 made of a Group III nitride-based
compound semiconductor formed on the first semiconductor layer 12. The
semiconductor layer 12 is provided with a plurality of pores 14. Thus, a
compound semiconductor layer containing a Group III nitride-based compound
semiconductor with excellent surface planarity and crystallinity can be
provided, as well as a method for manufacturing the same, and a
semiconductor device using the same.