A method for nondestructively reading memory cells of an MRAM memory, which includes steps of: determining a standard resistance of a memory cell at a voltage at which a resistance of the memory cell is independent of a stored content of the memory cell; determining an actual resistance of the memory cell at a voltage at which the resistance of the memory cell is dependent on the stored content of the memory cell; obtaining a normalized actual resistance of the memory cell by dividing the actual resistance by the standard resistance; obtaining a comparison result by comparing the normalized actual resistance with a reference value; and detecting the stored content of the memory cell dependent on the comparison result.