A semiconductor device is provided having n-type device layers of III-V
nitride having donor dopants such as germanium (Ge), silicon (Si), tin
(Sn), and/or oxygen (O) and/or p-type device layers of III-V nitride
having acceptor dopants such as magnesium (Mg), beryllium (Be), zinc (Zn),
and/or cadmium (Cd), either simultaneously or in a doping superlattice, to
engineer strain, improve conductivity, and provide longer wavelength light
emission.