The crystallization temperature of a ferroelectric layer (3) (dielectric) for a storage capacitor can be lowered by applying a very thin (CeO.sub.2 layer (2) to a first platinum electrode layer (1) of the storage capacitor before the ferroelectric layer is deposited. The dielectric layer (3) deposited in amorphous state is then crystallized by a temperature treatment step at a temperature in the range between 590.degree. C. and 620.degree. C. A second electrode layer (4) is then applied to complete the storage capacitor.