A gate-controlled quantum wire device is disclosed, which may use a channel of electrically resistive material involving tunneling between localized states.

Un dispositif porte-commandé de fil de quantum est révélé, qui peut utiliser un canal du matériel électriquement résistif impliquant le perçage d'un tunnel entre les états localisés.
 
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< Logic or memory element based on n-stable phase-locking of single-electron tunneling oscillation, and computer using the same

< Sub-nanoscale electronic systems and devices

> Quantum effect device

> Method and system for molecular charge storage field effect transistor
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