An inverted III-nitride light-emitting device (LED) with highly reflective ohmic contacts includes n- and p-electrode metallizations that are opaque, highly reflective, and provide excellent current spreading. The n- and p-electrodes each absorb less than 25% of incident light per pass at the peak emission wavelength of the LED active region.

Um dispositivo light-emitting invertido do Iii-iII-nitride (diodo emissor de luz) com contatos ôhmicos altamente reflexivos inclui os metallizations do n e do p-elétrodo que são opacos, altamente reflexivos, e fornecem espalhar atual excelente. O n e os p-elétrodos cada um absorvem menos de 25% da luz do incident por a passagem no wavelength peak da emissão da região ativa do diodo emissor de luz.

 
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