A metal oxide dielectric film of perovskite type represented by ABO.sub.3, wherein a composition ratio between an A-element and a B-element contained in the film satisfies the following Equation (1-1), and an amount of an oxide of the A-element contained in the film satisfies the following Equation (1-2): 1<[A]/[B].ltoreq.1.1 (1-1) where [A]/[B] represents a composition ratio between the A-element and the B-element, (I.sub.AO /I.sub.ABO3)<10.sup.-2 (1-2) where I.sub.AO and I.sub.ABO3 respectively represent (111) peak intensity of an oxide of the A-element and (100) peak intensity of the metal oxide dielectric in an X-axis diffraction spectrum.