Improved methods for performing thermal annealing of objects, such as wafers of integrated circuits (ICs), employ a scanning continuous wave laser beam. The annealing time is dependent upon the beam intensity, the beam spot size, the beam shape, and the beam dwell time, which can be effectively controlled by varying the scanning speed. A variety of different scan patterns can be used. Because the entire wafer is thermally processed by a continuously moving laser beam, annealing throughput is significantly improved over methods utilizing a stepping laser beam.