Low cross talk resistive cross point memory devices are provided, along
with methods of manufacture and use. The memory device comprises a bit
formed using a perovskite material interposed at a cross point of an upper
electrode and lower electrode. Each bit has a resistivity that can change
through a range of values in response to application of one, or more,
voltage pulses. Voltage pulses may be used to increase the resistivity of
the bit, decrease the resistivity of the bit, or determine the resistivity
of the bit. Memory circuits are provided to aid in the programming and
read out of the bit region.
