A layered trace configuration comprising a conductive trace capped with a
silicide material which allows for removal of oxide polymer residues
forming in vias used for interlayer contacts in a multilayer semiconductor
device and eliminates or greatly reduces the formation of metal polymer
residues in the vias. The formation of an interlayer contact according to
one embodiment of the present invention comprises providing a trace formed
on a semiconductor substrate and a silicide layer capping the conductive
layer. An interlayer dielectric is deposited over the silicide capped
trace and the substrate. A via is etched through the interlayer
dielectric, wherein the etch is selectively stopped on the silicide layer.
Any residue forming in the via is removed and a conductive material is
deposited in the via to form the interlayer contact.
