An integrated circuit and manufacturing method therefor is provided having
a semiconductor substrate with a semiconductor device and a device
dielectric layer formed on the semiconductor substrate. A channel
dielectric layer on the device dielectric layer has a channel opening, a
barrier layer lining the channel opening, and a conductor core filling the
channel opening. The barrier layer has a more negative heat of formation
than the channel dielectric layer whereby the barrier layer is reacts with
and forms a barrier to diffusion of the material of the conductor core to
the channel dielectric layer. The barrier layer also forms a stable
compound with the conductor core to form a coherent barrier layer bonding
the channel dielectric to the conductor core.
