The present invention relates to a method for forming a plurality of
quantum dots providing simultaneously reliability and massproduction
effects. The present invention includes the steps of: a method for forming
a quantum dot, including the steps of: forming a first insulating layer on
a semiconductor substrate; forming an opening that exposes the
semiconductor substrate by etching the first insulating layer; forming a
single crystal semiconductor layer in the opening and on the first
insulating layer adjacent to the opening; and forming a quantum dot on the
first insulating layer adjacent to the opening by removing the single
crystal semiconductor layer in the opening and portions of the singly
crystal layer on the first insulating layer adjacent to the opening.
