A boron-phosphide-based semiconductor light-emitting device having a
semiconductor substrate of a first conduction type having, on its bottom
surface, a bottom electrode; a first boron-phosphide-based semiconductor
layer of a first conductive type provided on the substrate; a Group III-V
compound semiconductor active layer provided on the first
boron-phosphide-based semiconductor layer; a second boron-phosphide-based
semiconductor layer of second conduction type provided on the active
layer; and a top electrode provided on the surface of the second
boron-phosphide-based semiconductor layer. The top electrode includes a
lower electrode and an upper electrode, the lower electrode is in direct
contact with the second boron-phosphide-based semiconductor layer and
formed of a metal incapable of establishing ohmic contact with the second
boron-phosphide-based semiconductor layer, and the upper electrode is
provided on the lower electrode and formed of a metal capable of
establishing ohmic contact with the second boron-phosphide-based
semiconductor layer.
