Dual write cycle programmable conductor memory system and method of operation

   
   

The present invention provides a method and apparatus for writing a programmable conductor random access memory (PCRAM) element. After a read operation of the memory element a complement logical state from that read is written back to the memory element. In one embodiment the memory element is then again written back to its original state. In another embodiment logic circuitry keeps track of whether the original logic state or its complement are stored in the memory element so that during the next read the stored logic will be correctly read.

 
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