Acid-catalyzed positive resist compositions suitable for bilayer or
multilayer lithographic applications are enabled by the use of a
combination of (a) an acid-sensitive imaging polymer, (b) a
radiation-sensitive acid generator, and (c) a non-polymeric silicon
additive. The imaging polymer is preferably imageable with 193 nm or
shorter wavelength imaging radiation. The resist compositions preferably
contain at least about 5 wt. % silicon based on the weight of the imaging
polymer. The compositions generally provide reduced line edge roughness
compared to conventional silicon-containing resists.
