A field effect transistor composed of:
an insulating layer;
a gate electrode;
a semiconductor layer including an organic semiconductor material and a
binder resin;
a source electrode; and
a drain electrode,
wherein the insulating layer, the gate electrode, the semiconductor layer,
the source electrode, and the drain electrode are in any sequence as long
as the gate electrode and the semiconductor layer both contact the
insulating layer, and the source electrode and the drain electrode both
contact the semiconductor layer.
