The invention includes methods of forming hafnium-containing materials,
such as, for example, hafnium oxide. In one aspect, a semiconductor
substrate is provided, and first reaction conditions are utilized to form
hafnium-containing seed material in a desired crystalline phase and
orientation over the substrate. Subsequently, second reaction conditions
are utilized to grow second hafnium-containing material over the seed
material. The second hafnium-containing material is in a crystalline phase
and/or orientation different from the crystalline phase and orientation of
the hafnium-containing seed material. The second hafnium-containing
material can be, for example, in an amorphous phase. The seed material is
then utilized to induce a desired crystalline phase and orientation in the
second hafnium-containing material. The invention also includes capacitor
constructions utilizing hafnium-containing materials, and circuit
assemblies comprising the capacitor constructions.
