Phosphine treatment of low dielectric constant materials in semiconductor device manufacturing

   
   

Improved dielectric layers are formed by surface treating the dielectric layer with a phosphine plasma prior to forming a barrier layer thereon. Embodiments include forming a trench in a low k dielectric layer and modifying the side surfaces of the trench by subjecting the dielectric to a phosphine plasma produced in PECVD chamber. A conductive feature is formed by depositing a conformal barrier layer on the low k dielectric including the treated side surfaces of the dielectric and depositing a copper containing layer within the trench.

As camadas dieléctricas melhoradas são dadas forma pela superfície que trata a camada dieléctrica com um plasma do phosphine antes de dar forma a uma camada de barreira thereon. As incorporações incluem dar forma a uma trincheira em uma camada dieléctrica baixa de k e modificar as superfícies laterais da trincheira sujeitando o dielétrico a um plasma do phosphine produzido na câmara de PECVD. Uma característica condutora é dada forma depositando uma camada de barreira conformal no dielétrico baixo de k including as superfícies laterais tratadas do dielétrico e depositando uma camada contendo de cobre dentro da trincheira.

 
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