Method of fabricating damascene structures in mechanically weak interlayer dielectrics

   
   

A copper damascene process for a mechanically weak low k dielectric layer is described. Electropolishing is used to etch back the copper. A sacrificial conductive layer beneath the barrier layer assures complete planarization of the copper.

Un processo damascene di rame per uno strato dielettrico basso meccanicamente debole di K è descritto. L'elettrolucidatura è usata per incidere indietro il rame all'acquaforte. Uno strato conduttivo sacrificial sotto lo strato di sbarramento assicura il planarization completo del rame.

 
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