Nitride-based semiconductor device and method of fabricating the same

   
   

A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

Un método de fabricar un dispositivo de semiconductor nitruro-basado capaz de reducir resistencia del contacto entre una cara del nitrógeno de un substrato nitruro-basado del semiconductor o de los similares y un electrodo se proporciona. Este método de fabricar un dispositivo de semiconductor nitruro-basado abarca pasos de grabar al agua fuerte la superficie trasera de una primera capa del semiconductor que consiste en un n-tipo capa nitruro-basada del semiconductor o un substrato nitruro-basado del semiconductor que tiene una estructura del wurtzite y que forma después de eso un electrodo del n-lado en detrás grabada al agua fuerte la superficie de la primera capa del semiconductor.

 
Web www.patentalert.com

< Group III nitride compound semiconductor light-emitting device

< Photodetector and photodetecting system capable of detecting information about the two-dimensional intensity distribution and wavelength distribution of incident light

> Vehicular sound-processing system incorporating an interior mirror user-interaction site for a restricted-range wireless communication system

> Method for producing lithographic printing plate, lithographic printing original plate for laser scan exposure, and photopolymerizable composition

~ 00131