Methods for cleaning semiconductor wafers are presented. Contaminants,
particularly photoresist and post-etch residue, are removed from
semiconductor wafers. A wafer or wafers is first treated with a
peroxide-containing medium, for example, to oxidatively cleave bond
structures of contaminants on the wafer work surface. Excitation energy is
used to activate the peroxide-containing medium toward the formation of
radical species. After treatment with the peroxide-containing medium, a
supercritical fluid treatment is used to remove any remaining contaminants
as well as to condition the wafer for subsequent processing.
