A new nonvolatile hybrid memory cell is provided. The cell is comprised of
a magnetic spin storage element and one or two semiconductor FET isolation
elements. The magnetic spin storage element is an electron spin-based
memory element situated on a silicon based substrate and includes a first
ferromagnetic layer with a changeable magnetization state, a second
ferromagnetic layer with a non-changeable magnetization state, and a base
layer situated between said first ferromagnetic layer and said second
ferromagnetic layer. The base layer is a material having electron levels
that are not significantly affected by an electron spin.
